Formation of Barrier to electrode has become more important for the semiconductor production.
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Barrier formation through UBM process without resist for electrode less than 10μm by Electroless Ni/Pd/Au.
＊Please be careful that there is possibility of infringement of United State (US) Patent on 3 layer plating with Ni/Pd/Au
Excellent selectivity properties to etch only the seed layer metal such as Copper and Titanium. Metal bump such as Solder or gold will not be corroded.
For more information, on Plating Chemicals for Semiconductors by Meltex Inc, click here.